Advances in carbon nanotube n-type doping: Methods, analysis and applications

Liam Brownlie, Joseph Shapter

Research output: Contribution to journalReview articlepeer-review

98 Citations (Scopus)

Abstract

Great advances in semiconductor technologies continue to be made with the demand for cheap, non-toxic, easily processed and environmentally friendly technologies on the rise. Single-walled carbon nanotubes (SWCNTs) are viewed as a promising candidate that satisfies these criteria however proper doping of the SWCNTs to provide n-type behaviour has been a persistent issue. In recent years, great advances have been made in providing air stable and efficient n-type doping of SWCNTs. This review presents the most recent and promising methods of n-type doping SWCNTs highlighted for their simplicity and quality of electrical properties. The analysis and major applications of these semiconductors with a focus on thermoelectric devices and transistors are discussed.

Original languageEnglish
Pages (from-to)257-270
Number of pages14
JournalCarbon
Volume126
Early online date3 Oct 2017
DOIs
Publication statusPublished - Jan 2018

Keywords

  • Semiconductors
  • Single-walled carbon nanotubes (SWCNTs)
  • thermoelectric devices
  • transistors

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