Applying computational nanomaterials design to the reactive ion etching of NiO thin films - A preliminary investigation

M. David; R. Muhida; T. Roman; S. Kunikata; W. A. Dĩo; H. Nakanishi; H. Kasai; F. Takano; H. Shima; H. Akinaga

doi:10.1088/0953-8984/19/36/365210

Applying computational nanomaterials design to the reactive ion etching of NiO thin films - A preliminary investigation

M. David, R. Muhida, T. Roman, S. Kunikata, W. A. Dĩo, H. Nakanishi, H. Kasai, F. Takano, H. Shima, H. Akinaga

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g.NH₃, CH₄). We strongly suggest the use of CH ₄ or any H-based gas source other than CHF₃ to enhance RIE process.

Original language	English
Article number	365210
Number of pages	7
Journal	Journal of Physics Condensed Matter
Volume	19
Issue number	36
DOIs	https://doi.org/10.1088/0953-8984/19/36/365210
Publication status	Published - 12 Sept 2007
Externally published	Yes

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title = "Applying computational nanomaterials design to the reactive ion etching of NiO thin films - A preliminary investigation",

abstract = "We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g.NH3, CH4). We strongly suggest the use of CH 4 or any H-based gas source other than CHF3 to enhance RIE process.",

author = "M. David and R. Muhida and T. Roman and S. Kunikata and Dĩo, {W. A.} and H. Nakanishi and H. Kasai and F. Takano and H. Shima and H. Akinaga",

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AU - David, M.

AU - Muhida, R.

AU - Roman, T.

AU - Kunikata, S.

AU - Dĩo, W. A.

AU - Nakanishi, H.

AU - Kasai, H.

AU - Takano, F.

AU - Shima, H.

AU - Akinaga, H.

PY - 2007/9/12

Y1 - 2007/9/12

N2 - We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g.NH3, CH4). We strongly suggest the use of CH 4 or any H-based gas source other than CHF3 to enhance RIE process.

AB - We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g.NH3, CH4). We strongly suggest the use of CH 4 or any H-based gas source other than CHF3 to enhance RIE process.

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DO - 10.1088/0953-8984/19/36/365210

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JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

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M1 - 365210

ER -

Applying computational nanomaterials design to the reactive ion etching of NiO thin films - A preliminary investigation

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