Applying computational nanomaterials design to the reactive ion etching of NiO thin films - A preliminary investigation

M. David, R. Muhida, T. Roman, S. Kunikata, W. A. Dĩo, H. Nakanishi, H. Kasai, F. Takano, H. Shima, H. Akinaga

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g.NH3, CH4). We strongly suggest the use of CH 4 or any H-based gas source other than CHF3 to enhance RIE process.

Original languageEnglish
Article number365210
Number of pages7
JournalJournal of Physics Condensed Matter
Volume19
Issue number36
DOIs
Publication statusPublished - 12 Sep 2007
Externally publishedYes

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