Applying computational nanomaterials design to the reactive ion etching of NiO thin films - A preliminary investigation

We have developed and proposed a model for reactive ion etching (RIE) process design of nickel oxide thin films using a computational materials design based on ab initio calculations. On etching NiO, we found that it was necessary to have hydrogen-based reactive gases in the initial state in order to enhance RIE (e.g.NH₃, CH₄). We strongly suggest the use of CH ₄ or any H-based gas source other than CHF₃ to enhance RIE process.