TY - JOUR
T1 - Benchmark Integral Cross Sections for Electron Impact Excitation of the n=2 States in Helium
AU - Hoshino, M
AU - Kato, H
AU - Suzuki, D
AU - Tanaka, H
AU - Bray, I
AU - Fursa, D
AU - Buckman, S
AU - Ingolfsson, O
AU - Brunger, Michael
PY - 2010
Y1 - 2010
N2 - In this paper, we present integral cross sections (ICS) for electron impact excitation of the n=2 levels in helium in the impact energy range of 23.5 eV to 35 eV. The ICS of each final state, 23S, 21S, 2 3P and 21P, has been determined by integration of the angular differential cross sections (DCS) over all of 0° to 180°, where those DCS were obtained from both our previous experiments and the extrapolation using the convergent close coupling calculation. The present experimental ICS for the optically allowed 21P transition state are also compared with those obtained from the BEf-scaling method. Very good agreement between the experimental and BEf-scaled 21P ICSs is generally found in the measured impact energy region.
AB - In this paper, we present integral cross sections (ICS) for electron impact excitation of the n=2 levels in helium in the impact energy range of 23.5 eV to 35 eV. The ICS of each final state, 23S, 21S, 2 3P and 21P, has been determined by integration of the angular differential cross sections (DCS) over all of 0° to 180°, where those DCS were obtained from both our previous experiments and the extrapolation using the convergent close coupling calculation. The present experimental ICS for the optically allowed 21P transition state are also compared with those obtained from the BEf-scaling method. Very good agreement between the experimental and BEf-scaled 21P ICSs is generally found in the measured impact energy region.
KW - electronic excitations
KW - helium
KW - low energy electron impact
UR - http://www.scopus.com/inward/record.url?scp=77954791505&partnerID=8YFLogxK
U2 - 10.1088/1009-0630/12/3/20
DO - 10.1088/1009-0630/12/3/20
M3 - Article
VL - 12
SP - 348
EP - 352
JO - Plasma Science and Technology
JF - Plasma Science and Technology
SN - 1009-0630
IS - 3
ER -