CMOS compatible integrated ferroelectric tunnel junctions (FTJ)

Mohammad Abuwasib, Hyungwoo Lee, Pankaj Sharma, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

As traditional CMOS scaling reaches fundamental limits, there is an increasing interest in non-charge based beyond CMOS devices that could increase the functionality of logic chips [1]. Ferroelectric tunnel junction (FTJ) devices are attractive due to their large ON/OFF ratios, non-volatile, and low energy operation [2]. Switching has been demonstrated in the metal-ferroelectric-metal (M-F-M) FTJs in non-integrated devices that use the conductive atomic force microscope (AFM) tip as an electrode [3-4]. However, it is necessary to investigate the CMOS compatibility, scalability, switching speed and switching dynamics in an integrated FTJ device. We report a CMOS compatible integrated FTJ fabrication process that is scalable from micron to deep submicron dimensions. The first generation integrated FTJs show switching with peak ON/OFF ratio of 60. We also report the scalability of the ferroelectric polarization loop to 550 nm × 550 nm device. Conductivity degradation of the LaxSr1-xMnO3 (LSMO) bottom conductor is observed due to reactive ion etch (RIE) process that impacts device performance.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-46
Number of pages2
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 3 Aug 2015
Externally publishedYes
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 21 Jun 201524 Jun 2015

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Conference

Conference73rd Annual Device Research Conference, DRC 2015
Country/TerritoryUnited States
CityColumbus
Period21/06/1524/06/15

Keywords

  • CMOS integrated circuits
  • Force
  • Gold
  • Lead
  • Resistance
  • Switching circuits

Fingerprint

Dive into the research topics of 'CMOS compatible integrated ferroelectric tunnel junctions (FTJ)'. Together they form a unique fingerprint.

Cite this