Corrigendum: The burning rate of energetic films of nanostructured porous silicon (Small (2011) 23 (3392-3398) DOI: 10.1002/smll.201101087)

Andrew Plummer; Valerian Kuznetsov; Timothy Joyner; Joe Shapter; Nicolas H. Voelcker

doi:10.1002/smll.201190094

Corrigendum: The burning rate of energetic films of nanostructured porous silicon (Small (2011) 23 (3392-3398) DOI: 10.1002/smll.201101087)

Andrew Plummer
, Valerian Kuznetsov
, Timothy Joyner
, Joe Shapter
, Nicolas H. Voelcker

Research output: Contribution to journal › Comment/debate

Abstract

Between Early View online publication and issue publication, the authors became aware of an additional relevant reference.^[23] Becker et al. reported ﬂame propagation velocities for pSi impregnated with NaClO₄ on the order of 3000 m/s. In their work, thepSi was prepared by galvanic etching, and the velocity measurements were performed in a desiccator box under nitrogen at arelative humidity below 2%.

[23] C. R. Becker, S. Apperson, C. J. Morris, S. Gangopadhyay, L. J. Currano, W. A. Churaman, C. R. Stoldt, Nano Lett. 2011, 11, 803.

Original language	English
Pages (from-to)	3260
Number of pages	1
Journal	Small
Volume	7
Issue number	23
DOIs	https://doi.org/10.1002/smll.201190094
Publication status	Published - 2 Dec 2011

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abstract = "Between Early View online publication and issue publication, the authors became aware of an additional relevant reference.[23] Becker et al. reported ﬂame propagation velocities for pSi impregnated with NaClO4 on the order of 3000 m/s. In their work, thepSi was prepared by galvanic etching, and the velocity measurements were performed in a desiccator box under nitrogen at arelative humidity below 2\%. [23] C. R. Becker, S. Apperson, C. J. Morris, S. Gangopadhyay, L. J. Currano, W. A. Churaman, C. R. Stoldt, Nano Lett. 2011, 11, 803.",

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AU - Voelcker, Nicolas H.

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AB - Between Early View online publication and issue publication, the authors became aware of an additional relevant reference.[23] Becker et al. reported ﬂame propagation velocities for pSi impregnated with NaClO4 on the order of 3000 m/s. In their work, thepSi was prepared by galvanic etching, and the velocity measurements were performed in a desiccator box under nitrogen at arelative humidity below 2%. [23] C. R. Becker, S. Apperson, C. J. Morris, S. Gangopadhyay, L. J. Currano, W. A. Churaman, C. R. Stoldt, Nano Lett. 2011, 11, 803.

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Corrigendum: The burning rate of energetic films of nanostructured porous silicon (Small (2011) 23 (3392-3398) DOI: 10.1002/smll.201101087)

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