Electronic Properties of W’ Twin Walls in Ferroelastic BiVO4

Yuwen Xu, Pankaj Sharma, Haotian Wen, Dawei Zhang, Charlie Kong, Zewu Yan, Shery L.Y. Chang, Jan Seidel

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)
33 Downloads (Pure)

Abstract

Topological defects in ferroic materials can exhibit intrinsic properties that differ from the bulk. Here, structural and electronic variations of non-prominent (W’) ferroelastic twin domain walls are investigated in BiVO4, a widely investigated photocatalytic material. Using aberration-corrected scanning transmission electron microscopy (STEM), a kink configuration of the sharp ferroelastic twin wall with an altered electronic structure is revealed. Nanoscale conductivity measurements by conductive atomic force microscopy (c-AFM) show higher conductivity at twin walls compared to non-conductive bulk domains. Electronic structure investigation by electron energy loss spectroscopy (EELS) shows a higher density of oxygen vacancies and possible polaron accumulation at the wall. These findings reveal the electronic properties of BiVO4 domain walls, which are interesting for nanoscale-engineered catalytic concepts of BiVO4 and materials design for photochemistry-relevant applications.

Original languageEnglish
Article number2400420
Number of pages8
JournalAdvanced Functional Materials
Volume34
Issue number33
DOIs
Publication statusPublished - 14 Aug 2024

Keywords

  • domain walls
  • electronic properties
  • microscopy
  • spectroscopy
  • topological defects

Fingerprint

Dive into the research topics of 'Electronic Properties of W’ Twin Walls in Ferroelastic BiVO4'. Together they form a unique fingerprint.

Cite this