Electronic structure of thin MoS2 films

Research output: Contribution to journalArticlepeer-review

7 Downloads (Pure)

Abstract

The valence electron structure of exfoliated monolayer MoS2 deposited onto SiO2 was determined by UV photoelectron spectroscopy through component analysis in combination with Auger electron microscopy. The valence electron cut-off for bulk MoS2 was found at 0.64 eV binding energy whilst monolayer MoS2 and few layer MoS2 have higher binding energies of 0.89 eV and 1.26 eV respectively. SiO2 is known to interact only weakly with MoS2. Thus, the valence electron structure of higher binding energy determined here is thus considered to represent that of a material not affected by strain. The implications of the change in the valence electron cut-off are discussed.

Original languageEnglish
Pages (from-to)1276-1284
Number of pages9
JournalRSC Applied Interfaces
Volume1
Issue number6
DOIs
Publication statusPublished - 1 Nov 2024

Keywords

  • Films
  • MoS2 films

Fingerprint

Dive into the research topics of 'Electronic structure of thin MoS2 films'. Together they form a unique fingerprint.

Cite this