Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates

H. Alex Hsain; Pankaj Sharma; Hyeonggeun Yu; Jacob L. Jones; Franky So; Jan Seidel

doi:10.1063/1.5031134

Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates

H. Alex Hsain, Pankaj Sharma, Hyeonggeun Yu, Jacob L. Jones, Franky So, Jan Seidel

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Hf_0.5Zr_0.5O₂ (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices.

Original language	English
Article number	022905
Number of pages	5
Journal	Applied Physics Letters
Volume	113
Issue number	2
DOIs	https://doi.org/10.1063/1.5031134
Publication status	Published - 9 Jul 2018
Externally published	Yes

Keywords

Ferroelectric materials
Piezoelectricity
Piezoresponse force spectroscopy
Semiconductor device fabrication
Thin films
Wearable technology

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abstract = "Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices.",

keywords = "Ferroelectric materials, Piezoelectricity, Piezoresponse force spectroscopy, Semiconductor device fabrication, Thin films, Wearable technology",

author = "Hsain, {H. Alex} and Pankaj Sharma and Hyeonggeun Yu and Jones, {Jacob L.} and Franky So and Jan Seidel",

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AU - Hsain, H. Alex

AU - Sharma, Pankaj

AU - Yu, Hyeonggeun

AU - Jones, Jacob L.

AU - So, Franky

AU - Seidel, Jan

PY - 2018/7/9

Y1 - 2018/7/9

N2 - Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices.

AB - Hf0.5Zr0.5O2 (HZO) films are grown on rigid glass and flexible polyimide substrates using non-rapid thermal annealing. Films are comparatively investigated using macroscopic and local probe-based approaches to characterize their ferroelectric and piezoelectric properties. The polarization-electric field (P-E) measurements reveal that the ferroelectric characteristics of these thin films agree with the observed switchable piezoresponse hysteresis loops as well as electrically written, oppositely oriented domains. Moreover, the HZO thin films grown on flexible polyimide substrates display significantly enhanced piezoelectric response in comparison to the films grown on rigid substrates. This effect is likely due to improved domain wall motion caused by the mechanical release of the film-substrate couple. These findings suggest that inherently lead-free HZO thin films on flexible substrates are potential candidate materials for improved piezoelectric applications in wearable devices.

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KW - Piezoelectricity

KW - Piezoresponse force spectroscopy

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KW - Thin films

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Enhanced piezoelectricity of thin film hafnia-zirconia (HZO) by inorganic flexible substrates

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