Examining the electrical and chemical properties of reduced grapheneoxide with varying annealing temperatures in argon atmosphere

Benjamin Chambers, Marco Notarianni, Jinzhang Liu, Nunzio Motta, Gunther Andersson

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    Graphene oxide flakes were successfully fabricated and deposited as a film onto a silicon substrate. A series of these samples were annealed at various temperatures under a low pressure argon environment. The valence structure of the surface is examined using ultraviolet photoelectron spectroscopy whilst the chemical nature of the surface is examined using X-ray photoelectron spectroscopy. The sheet resistance was measured to document the performance changes with variation in electronic and chemical nature of the surface. It was found that increasing the annealing temperature increased the 2p π content leading to a better conductivity and reduction in sheet resistance.

    Original languageEnglish
    Pages (from-to)719-725
    Number of pages7
    JournalApplied Surface Science
    Volume356
    DOIs
    Publication statusPublished - 2015

    Fingerprint Dive into the research topics of 'Examining the electrical and chemical properties of reduced grapheneoxide with varying annealing temperatures in argon atmosphere'. Together they form a unique fingerprint.

  • Cite this