Graphene masks as passivation layers in the electrochemical etching of silicon

Cheng Fang, Joseph Shapter, Nicholas Voelcker, Amanda Ellis

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Site-specific masking with graphene films has the potential to facilitate low-cost, high-throughput micro-patterns on silicon substrates over large areas. Here, a facile approach to using graphene as a masking agent on silicon wafers for site-specific patterning is demonstrated. Graphene sheets were deposited via a sealing-tape-exfoliation method onto hydride-terminated (Si-H) silicon substrates. Raman confocal mapping showed inhibition of oxidation of the Si wafer underlying the graphene, indicating that the graphene restricts the diffusion of oxygen onto the Si surface. The graphene coated Si substrates were then electrochemically etched in an aqueous HF/ethanol (3:1 (v/v)) anodization solution. Scanning electron microscopy showed that the graphene layer successfully restricted the etching of the Si surface, however, near the edge sites of the graphene deep etching occurred.

    Original languageEnglish
    Pages (from-to)7819-7823
    Number of pages5
    JournalJournal of Materials Science
    Volume49
    Issue number22
    DOIs
    Publication statusPublished - 2014

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