High carrier mobility in low band gap polymer-based field-effect transistors.

Miaoxiang Chen; Xavier Crispin; Eric Perzon; Mats R. Andersson; Tonu Pullerits; Mattias Andersson; Olle Inganas; Magnus Berggren

High carrier mobility in low band gap polymer-based field-effect transistors.

Miaoxiang Chen, Xavier Crispin, Eric Perzon, Mats R. Andersson, Tonu Pullerits, Mattias Andersson, Olle Inganas, Magnus Berggren

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Original language	English
Pages (from-to)	Art: 252105
Number of pages	13
Journal	Applied Physics Letters
Volume	87
Issue number	25
Publication status	Published - 2005

Cite this

@article{6428cc02a3cd4ac7ad7b19b7d1416f02,

title = "High carrier mobility in low band gap polymer-based field-effect transistors.",

author = "Miaoxiang Chen and Xavier Crispin and Eric Perzon and Andersson, {Mats R.} and Tonu Pullerits and Mattias Andersson and Olle Inganas and Magnus Berggren",

year = "2005",

language = "English",

volume = "87",

pages = "Art: 252105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - High carrier mobility in low band gap polymer-based field-effect transistors.

AU - Chen, Miaoxiang

AU - Crispin, Xavier

AU - Perzon, Eric

AU - Andersson, Mats R.

AU - Pullerits, Tonu

AU - Andersson, Mattias

AU - Inganas, Olle

AU - Berggren, Magnus

PY - 2005

Y1 - 2005

M3 - Article

SN - 0003-6951

VL - 87

SP - Art: 252105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -