High-Performance Hole Transport and Quasi-Balanced Ambipolar OFETs Based on D-A-A Thieno-benzo-isoindigo Polymers.

David James, Suhao Wang, Wei Ma, Svante Hedstrom, Xiangyi Meng, Petter Persson, Simone Fabiono, Xavier Crispin, Mats R. Andersson, Magnus Berggren, Ergang Wang

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    19 Citations (Scopus)

    Abstract

    Two new conjugated polymers are synthesized based on a novel donor–acceptor–acceptor (D–A–A) design strategy with the intention of attaining lower lowest unoccupied molecular obital levels compared to the normally used D–A strategy. By coupling two thieno-benzo-isoindigo units together via the phenyl position to give a new symmetric benzene-coupled di-thieno-benzo-isoindigo (BdiTBI) monomer as an A–A acceptor and thiophene (T) or bithiophene (2T) as a donor, two new polymers PT-BdiTBI and P2T-BdiTBI are synthesized via Stille coupling. The two polymers are tested in top gate and top contact field effect transistors, which exhibit balanced ambipolar charge transport properties with poly(methyl methacrylate) as dielectric and a high hole mobility up to 1.1 cm2 V–1 s–1 with poly(trifluoroethylene) as dielectric. The polymer films are investigated using atomic force microscopy, which shows fibrous features due to their high crystallinity as indicated by grazing incidence wide-angle X-ray scattering. The theoretical calculations agree well with the experimental data on the energy levels. It is demonstrated that the D–A–A strategy is very effective for designing low band gap polymers for organic electronic applications.

    Original languageEnglish
    Article number1500313
    Pages (from-to)Art: 1500313
    Number of pages8
    JournalAdvanced Electronic Materials
    Volume2
    Issue number4
    DOIs
    Publication statusPublished - 2016

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  • Cite this

    James, D., Wang, S., Ma, W., Hedstrom, S., Meng, X., Persson, P., Fabiono, S., Crispin, X., Andersson, M. R., Berggren, M., & Wang, E. (2016). High-Performance Hole Transport and Quasi-Balanced Ambipolar OFETs Based on D-A-A Thieno-benzo-isoindigo Polymers. Advanced Electronic Materials, 2(4), Art: 1500313. [1500313]. https://doi.org/10.1002/aelm.201500313