High-yield synthesis of silicon carbide nanowires by solar and lamp ablation

Hai-bo Lu, Benjamin Chan, Xiaolin Wang, Hui Chua, Colin Raston, Ana Albu-Yaron, Moshe Levy, Ronit Popowitz-Biro, Reshef Tenne, Daniel Feuermann, Jeffrey Gordon

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    18 Citations (Scopus)

    Abstract

    We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.

    Original languageEnglish
    Article number335603
    Pages (from-to)335603
    Number of pages7
    JournalNanotechnology
    Volume24
    Issue number33
    DOIs
    Publication statusPublished - 23 Aug 2013

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  • Cite this

    Lu, H., Chan, B., Wang, X., Chua, H., Raston, C., Albu-Yaron, A., Levy, M., Popowitz-Biro, R., Tenne, R., Feuermann, D., & Gordon, J. (2013). High-yield synthesis of silicon carbide nanowires by solar and lamp ablation. Nanotechnology, 24(33), 335603. [335603]. https://doi.org/10.1088/0957-4484/24/33/335603