TY - JOUR
T1 - High-yield synthesis of silicon carbide nanowires by solar and lamp ablation
AU - Lu, Hai-bo
AU - Chan, Benjamin
AU - Wang, Xiaolin
AU - Chua, Hui
AU - Raston, Colin
AU - Albu-Yaron, Ana
AU - Levy, Moshe
AU - Popowitz-Biro, Ronit
AU - Tenne, Reshef
AU - Feuermann, Daniel
AU - Gordon, Jeffrey
PY - 2013/8/23
Y1 - 2013/8/23
N2 - We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.
AB - We report a reasonably high yield (∼50%) synthesis of silicon carbide (SiC) nanowires from silicon oxides and carbon in vacuum, by novel solar and lamp photothermal ablation methods that obviate the need for catalysis, and allow relatively short reaction times (∼10 min) in a nominally one-step process that does not involve toxic reagents. The one-dimensional core/shell β-SiC/SiOx nanostructures - characterized by SEM, TEM, HRTEM, SAED, XRD and EDS - are typically several microns long, with core and outer diameters of about 10 and 30 nm, respectively. HRTEM revealed additional distinctive nanoscale structures that also shed light on the formation pathways.
UR - http://www.scopus.com/inward/record.url?scp=84881162932&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/24/33/335603
DO - 10.1088/0957-4484/24/33/335603
M3 - Article
VL - 24
SP - 335603
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 33
M1 - 335603
ER -