Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications

M ULRICH, R Johnson, J Hong, J Rowe, G Lucovsky, Jamie Quinton, T Madey

    Research output: Contribution to journalArticle

    7 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1732-1738
    Number of pages7
    JournalJournal of Vacuum Science and Technology B
    Issue number4
    Publication statusPublished - 2002

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