Lateral Gating of 2D Electron Gas in Cross-Sectional LaAlO3/SrTiO3

Fan Ji; Pankaj Sharma; Tongzheng Xin; Dawei Zhang; Ying Liu; Ranming Niu; Julie M. Cairney; Jan Seidel

doi:10.1002/aelm.202000068

Lateral Gating of 2D Electron Gas in Cross-Sectional LaAlO₃/SrTiO₃

Fan Ji, Pankaj Sharma, Tongzheng Xin, Dawei Zhang, Ying Liu, Ranming Niu, Julie M. Cairney, Jan Seidel

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

2D electron gas at LaAlO₃/SrTiO₃ (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric-field control by lateral gating of the interface and modification of its electronic properties in cross-sectional samples that allows direct access to depth-resolved physical-property measurements is investigated. Local scanning probe measurements in conjunction with electrical characterization allow it to be established that field-driven reversible migration of oxygen vacancies is the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.

Original language	English
Article number	2000068
Number of pages	6
Journal	Advanced Electronic Materials
Volume	6
Issue number	4
DOIs	https://doi.org/10.1002/aelm.202000068
Publication status	Published - Apr 2020
Externally published	Yes

Keywords

2D electron gas
field-effect devices
heterointerfaces
lateral gating
oxygen vacancies

Access to Document

10.1002/aelm.202000068Licence: In Copyright

Cite this

@article{06e798e49c65472994a84b5eb70a09b0,

title = "Lateral Gating of 2D Electron Gas in Cross-Sectional LaAlO3/SrTiO3",

abstract = "2D electron gas at LaAlO3/SrTiO3 (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric-field control by lateral gating of the interface and modification of its electronic properties in cross-sectional samples that allows direct access to depth-resolved physical-property measurements is investigated. Local scanning probe measurements in conjunction with electrical characterization allow it to be established that field-driven reversible migration of oxygen vacancies is the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.",

keywords = "2D electron gas, field-effect devices, heterointerfaces, lateral gating, oxygen vacancies",

author = "Fan Ji and Pankaj Sharma and Tongzheng Xin and Dawei Zhang and Ying Liu and Ranming Niu and Cairney, {Julie M.} and Jan Seidel",

year = "2020",

month = apr,

doi = "10.1002/aelm.202000068",

language = "English",

volume = "6",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Lateral Gating of 2D Electron Gas in Cross-Sectional LaAlO3/SrTiO3

AU - Ji, Fan

AU - Sharma, Pankaj

AU - Xin, Tongzheng

AU - Zhang, Dawei

AU - Liu, Ying

AU - Niu, Ranming

AU - Cairney, Julie M.

AU - Seidel, Jan

PY - 2020/4

Y1 - 2020/4

N2 - 2D electron gas at LaAlO3/SrTiO3 (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric-field control by lateral gating of the interface and modification of its electronic properties in cross-sectional samples that allows direct access to depth-resolved physical-property measurements is investigated. Local scanning probe measurements in conjunction with electrical characterization allow it to be established that field-driven reversible migration of oxygen vacancies is the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.

AB - 2D electron gas at LaAlO3/SrTiO3 (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric-field control by lateral gating of the interface and modification of its electronic properties in cross-sectional samples that allows direct access to depth-resolved physical-property measurements is investigated. Local scanning probe measurements in conjunction with electrical characterization allow it to be established that field-driven reversible migration of oxygen vacancies is the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.

KW - 2D electron gas

KW - field-effect devices

KW - heterointerfaces

KW - lateral gating

KW - oxygen vacancies

UR - http://www.scopus.com/inward/record.url?scp=85081981758&partnerID=8YFLogxK

U2 - 10.1002/aelm.202000068

DO - 10.1002/aelm.202000068

M3 - Article

AN - SCOPUS:85081981758

SN - 2199-160X

VL - 6

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 4

M1 - 2000068

ER -

Lateral Gating of 2D Electron Gas in Cross-Sectional LaAlO₃/SrTiO₃

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this