Lateral Gating of 2D Electron Gas in Cross-Sectional LaAlO3/SrTiO3

Fan Ji, Pankaj Sharma, Tongzheng Xin, Dawei Zhang, Ying Liu, Ranming Niu, Julie M. Cairney, Jan Seidel

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


2D electron gas at LaAlO3/SrTiO3 (LAO/STO) interfaces has emerged as an attractive platform for novel nanoelectronic devices. Control over the active functional interface by electrical or mechanical means in this regard is of special interest. A new means of electric-field control by lateral gating of the interface and modification of its electronic properties in cross-sectional samples that allows direct access to depth-resolved physical-property measurements is investigated. Local scanning probe measurements in conjunction with electrical characterization allow it to be established that field-driven reversible migration of oxygen vacancies is the origin of enhancement and suppression of electronic conductivity in LAO/STO. These results point to new possibilities of device property control in complex oxide heterostructures and thin films that contain highly conductive engineered interfaces.

Original languageEnglish
Article number2000068
Number of pages6
JournalAdvanced Electronic Materials
Issue number4
Publication statusPublished - Apr 2020
Externally publishedYes


  • 2D electron gas
  • field-effect devices
  • heterointerfaces
  • lateral gating
  • oxygen vacancies


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