Low Temperature Atomic Layer Deposition of Titania Thin Films

Gerry Triani, Jonathan Campbell, Peter Evans, J Davis, B Latella, Robert Burford

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    46 Citations (Scopus)

    Abstract

    This paper presents a comprehensive study of atomic layer deposition of TiO2 films on silicon and polycarbonate substrates using TiCl4 and H2O as precursors at temperatures in the range 80-120 °C. An in-situ quartz crystal microbalance was used to monitor different processing conditions and the resultant films were characterised ex-situ using a suite of surface analytical tools. In addition, the contact angle and wettability of as-deposited and UV irradiated films were assessed. The latter was found to reduce the contact angle from ≥ 80° to < 10°. Finally, the effect of surface pre-treatment on film toughness and adhesion was investigated and the results show a significant improvement for the pre-treated films.

    Original languageEnglish
    Pages (from-to)3182-3189
    Number of pages8
    JournalThin Solid Films
    Volume518
    Issue number12
    DOIs
    Publication statusPublished - 2 Apr 2010

    Keywords

    • Adhesion and tensile properties
    • Atomic layer deposition
    • Contact angle
    • Photoactivity
    • Polymer substrates
    • Titanium dioxide

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  • Cite this

    Triani, G., Campbell, J., Evans, P., Davis, J., Latella, B., & Burford, R. (2010). Low Temperature Atomic Layer Deposition of Titania Thin Films. Thin Solid Films, 518(12), 3182-3189. https://doi.org/10.1016/j.tsf.2009.09.010