Mechanical Tuning of LaAlO3/SrTiO3 Interface Conductivity

P. Sharma, S. Ryu, J. D. Burton, T. R. Paudel, C. W. Bark, Z. Huang, Ariando, E. Y. Tsymbal, G. Catalan, C. B. Eom, A. Gruverman

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)

Abstract

In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. The highly conductive state at the interface between insulators LaAlO3 and SrTiO3 is a prime example of such emergent functionality, with potential application in high electron density transistors. In this report, we demonstrate a new paradigm for voltage-free tuning of LaAlO3/SrTiO3 (LAO/STO) interface conductivity, which involves the mechanical gating of interface conductance through stress exerted by the tip of a scanning probe microscope. The mechanical control of channel conductivity and the long retention time of the induced resistance states enable transistor functionality with zero gate voltage.

Original languageEnglish
Pages (from-to)3547-3551
Number of pages5
JournalNano Letters
Volume15
Issue number5
DOIs
Publication statusPublished - 13 May 2015
Externally publishedYes

Keywords

  • 2D electron gas
  • Complex oxides
  • heterointerfaces
  • memristors
  • resistive switching

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