Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation [Expired]

Peter Freiermuth; Kathleen Ginn; Jeffrey Haley; Susan LaMaire; David Lewis; Gavin Mills; Timothy Redmond; Yuk Tsang; Joseph Van Horn; Alfred Viehbeck; George Walker; Jer-Ming Yang; Clarence Long

Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation [Expired]

Peter Freiermuth (Inventor), Kathleen Ginn (Inventor), Jeffrey Haley (Inventor), Susan LaMaire (Inventor), David Lewis (Inventor), Gavin Mills (Inventor), Timothy Redmond (Inventor), Yuk Tsang (Inventor), Joseph Van Horn (Inventor), Alfred Viehbeck (Inventor), George Walker (Inventor), Jer-Ming Yang (Inventor), Clarence Long (Inventor)

Research output: Patent

Abstract

The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

Original language	English
Patent number	US5519193A
Publication status	Published - 1996

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Freiermuth, P., Ginn, K., Haley, J., LaMaire, S., Lewis, D., Mills, G., Redmond, T., Tsang, Y., Van Horn, J., Viehbeck, A., Walker, G., Yang, J.-M., & Long, C. (1996). Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation [Expired]. (Patent No. US5519193A). https://patents.google.com/patent/US5519193A

@misc{5ab58d6187564ee083fd853436a94625,

title = "Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation [Expired]",

abstract = "The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.",

author = "Peter Freiermuth and Kathleen Ginn and Jeffrey Haley and Susan LaMaire and David Lewis and Gavin Mills and Timothy Redmond and Yuk Tsang and {Van Horn}, Joseph and Alfred Viehbeck and George Walker and Jer-Ming Yang and Clarence Long",

year = "1996",

language = "English",

type = "Patent",

note = "US5519193A",

}

TY - PAT

T1 - Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation [Expired]

AU - Freiermuth, Peter

AU - Ginn, Kathleen

AU - Haley, Jeffrey

AU - LaMaire, Susan

AU - Lewis, David

AU - Mills, Gavin

AU - Redmond, Timothy

AU - Tsang, Yuk

AU - Van Horn, Joseph

AU - Viehbeck, Alfred

AU - Walker, George

AU - Yang, Jer-Ming

AU - Long, Clarence

PY - 1996

Y1 - 1996

N2 - The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

AB - The described invention is directed to microwave methods for burning-in, electrical stressing, thermal stressing and reducing rectifying junction leakage current in fully processed semiconductor chips individually and at wafer level, as well as burning in and stressing semiconductor chip packaging substrates and the combination of a semiconductor chip mounted onto a semiconductor chip packaging substrate. Microwaves burn-in devices in a substantially shorter period of time than conventional burn-in techniques and avoid the need for special workpiece holders which are required by conventional stress and burn-in techniques. Additionally, microwave methods are described for reducing the leakage current of recitfying junctions, such as PN junctions and Schottky barrier diode junctions of semiconductor devices on fully processed semiconductor chips and wafers.

M3 - Patent

M1 - US5519193A

ER -

Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation [Expired]

Abstract

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