New Symmetric Enhanced-Boost Modified Z-Source Inverters with Switched Z-Impedance

Nafis Subhani, Ramani Kannan, Apel Mahmud

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)

Abstract

In this paper, two new symmetric structures are proposed to modify existing enhanced-boost Z-source inverter (EB-ZSI) by employing the same number of components in the Z-impedance network. The Z-impedance network in the first structure is connected in parallel with H-bridge circuit to form a topology called, enhanced-boost modified Z-source inverter (EBM-ZSI) while the second topology is named as improved EBM-ZSI (iEBM-ZSI) where Z impedance network is connected in series to H-bridge circuit. The proposed structures or topologies exhibit less capacitor voltage stresses on their impedance networks and input start-up inrush current for a similar boost factor and voltage gain to that of an EB-ZSI. The proposed iEBM possesses a common ground feature along with the improved performance in terms of reducing both the capacitor voltage stress and input start-up inrush current as compared to both EBM-ZSI and EB-ZSI. This paper presents some analyses to support these claims and simulation studies are carried out to further strengthen the analytical results.
Original languageEnglish
Title of host publication2020 IEEE International Conference on Power Electronics, Smart Grid and Renewable Energy, PESGRE 2020
Subtitle of host publicationIEEE PESGRE 2020
Place of PublicationUnited States
PublisherInstitute of Electrical and Electronics Engineers
Pages1-6
Number of pages6
ISBN (Electronic)978-1-7281-4251-7, 978-1-7281-4250-0
ISBN (Print)978-1-7281-4252-4
DOIs
Publication statusPublished - Jan 2020
Externally publishedYes

Publication series

Name2020 IEEE International Conference on Power Electronics, Smart Grid and Renewable Energy, PESGRE 2020

Keywords

  • Boost factor
  • Capacitor voltage stress
  • Enhanced-boost
  • Impedance network
  • Z-source inverter

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