TY - JOUR
T1 - Poly(4-vinylpyridine): A New Interface Layer for Organic Solar Cells
AU - Sharma, Anirudh
AU - Kroon, Renee
AU - Lewis, David
AU - Andersson, Gunther
AU - Andersson, Mats R.
PY - 2017/3/29
Y1 - 2017/3/29
N2 - Poly(4-vinylpyridine) (P4VP) was used as a cathode interface layer in inverted organic solar cells (OSCs) fabricated using poly[2,3-bis(3-octyloxyphenyl)quinoxaline-5,8-diyl-alt-thiophene-2,5-diyl] (TQ1) and PC71BM (phenyl C71 butyric acid methyl ester) as the donor and acceptor materials, respectively. We successfully demonstrate that the work function of underlying indium tin oxide (ITO) electrode can be significantly reduced by ∼0.7 eV, after modification of the surface with a thin film of P4VP. Photoconversion efficiency of 4.7% was achieved from OSCs incorporating P4VP interface layer between the ITO and bulk heterojunction (BHJ). Thin P4VP layer, when used to modify ZnO electron transport layer in inverted OSCs, reduced the ZnO work function from 3.7 to 3.4 eV, which resulted in a noteworthy increase in open-circuit voltage from 840 to 890 mV. On simultaneous modification of ZnO with P4VP and optimization of the BHJ morphology by using solvent additive chloronapthalene, photoconversion efficiency of OSCs was significantly increased from 4.6% to 6.3%. The enhanced device parameters are also attributed to an energetically favorable material stratification, as a result of an enrichment of PC71BM toward the P4VP interface.
AB - Poly(4-vinylpyridine) (P4VP) was used as a cathode interface layer in inverted organic solar cells (OSCs) fabricated using poly[2,3-bis(3-octyloxyphenyl)quinoxaline-5,8-diyl-alt-thiophene-2,5-diyl] (TQ1) and PC71BM (phenyl C71 butyric acid methyl ester) as the donor and acceptor materials, respectively. We successfully demonstrate that the work function of underlying indium tin oxide (ITO) electrode can be significantly reduced by ∼0.7 eV, after modification of the surface with a thin film of P4VP. Photoconversion efficiency of 4.7% was achieved from OSCs incorporating P4VP interface layer between the ITO and bulk heterojunction (BHJ). Thin P4VP layer, when used to modify ZnO electron transport layer in inverted OSCs, reduced the ZnO work function from 3.7 to 3.4 eV, which resulted in a noteworthy increase in open-circuit voltage from 840 to 890 mV. On simultaneous modification of ZnO with P4VP and optimization of the BHJ morphology by using solvent additive chloronapthalene, photoconversion efficiency of OSCs was significantly increased from 4.6% to 6.3%. The enhanced device parameters are also attributed to an energetically favorable material stratification, as a result of an enrichment of PC71BM toward the P4VP interface.
KW - cathode interface layer
KW - inverted OSCs
KW - morphology
KW - pyridine
KW - work function
UR - http://www.scopus.com/inward/record.url?scp=85016581276&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b12687
DO - 10.1021/acsami.6b12687
M3 - Article
VL - 9
SP - 10929
EP - 10936
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 12
ER -