Reactive ion etching process of transition-metal oxide for resistance random access memory device

Fumiyoshi Takano, Hisashi Shima, Hidenobu Muramatsu, Yutaka Kokaze, Yutaka Nishioka, Koukou Suu, Hirofumi Kishi, Nelson Buntimil Arboleda, Melanie David, Tanglaw Roman, Hideaki Kasai, Hiro Akinaga

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13 Citations (Scopus)

Abstract

The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

Original languageEnglish
Article number6931
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number8
DOIs
Publication statusPublished - 22 Aug 2008
Externally publishedYes

Keywords

  • CHF-based discharge
  • Inductively coupled plasma (ICP)
  • Reactive ion etching (RIE)
  • Resistance random access memory (RRAM)
  • Transition-metal oxide

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