Reactive ion etching process of transition-metal oxide for resistance random access memory device

Fumiyoshi Takano; Hisashi Shima; Hidenobu Muramatsu; Yutaka Kokaze; Yutaka Nishioka; Koukou Suu; Hirofumi Kishi; Nelson Buntimil Arboleda; Melanie David; Tanglaw Roman; Hideaki Kasai; Hiro Akinaga

doi:10.1143/JJAP.47.6931

Reactive ion etching process of transition-metal oxide for resistance random access memory device

Fumiyoshi Takano, Hisashi Shima, Hidenobu Muramatsu, Yutaka Kokaze, Yutaka Nishioka, Koukou Suu, Hirofumi Kishi, Nelson Buntimil Arboleda, Melanie David, Tanglaw Roman, Hideaki Kasai, Hiro Akinaga

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF₃-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

Original language	English
Article number	6931
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.47.6931
Publication status	Published - 22 Aug 2008
Externally published	Yes

Keywords

CHF-based discharge
Inductively coupled plasma (ICP)
Reactive ion etching (RIE)
Resistance random access memory (RRAM)
Transition-metal oxide

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title = "Reactive ion etching process of transition-metal oxide for resistance random access memory device",

abstract = "The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM{\texttrademark}), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.",

keywords = "CHF-based discharge, Inductively coupled plasma (ICP), Reactive ion etching (RIE), Resistance random access memory (RRAM), Transition-metal oxide",

author = "Fumiyoshi Takano and Hisashi Shima and Hidenobu Muramatsu and Yutaka Kokaze and Yutaka Nishioka and Koukou Suu and Hirofumi Kishi and Arboleda, {Nelson Buntimil} and Melanie David and Tanglaw Roman and Hideaki Kasai and Hiro Akinaga",

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doi = "10.1143/JJAP.47.6931",

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T1 - Reactive ion etching process of transition-metal oxide for resistance random access memory device

AU - Takano, Fumiyoshi

AU - Shima, Hisashi

AU - Muramatsu, Hidenobu

AU - Kokaze, Yutaka

AU - Nishioka, Yutaka

AU - Suu, Koukou

AU - Kishi, Hirofumi

AU - Arboleda, Nelson Buntimil

AU - David, Melanie

AU - Roman, Tanglaw

AU - Kasai, Hideaki

AU - Akinaga, Hiro

PY - 2008/8/22

Y1 - 2008/8/22

N2 - The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

AB - The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

KW - CHF-based discharge

KW - Inductively coupled plasma (ICP)

KW - Reactive ion etching (RIE)

KW - Resistance random access memory (RRAM)

KW - Transition-metal oxide

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DO - 10.1143/JJAP.47.6931

M3 - Article

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VL - 47

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

M1 - 6931

ER -

Reactive ion etching process of transition-metal oxide for resistance random access memory device

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Keywords

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