TY - JOUR
T1 - Reactive ion etching process of transition-metal oxide for resistance random access memory device
AU - Takano, Fumiyoshi
AU - Shima, Hisashi
AU - Muramatsu, Hidenobu
AU - Kokaze, Yutaka
AU - Nishioka, Yutaka
AU - Suu, Koukou
AU - Kishi, Hirofumi
AU - Arboleda, Nelson Buntimil
AU - David, Melanie
AU - Roman, Tanglaw
AU - Kasai, Hideaki
AU - Akinaga, Hiro
PY - 2008/8/22
Y1 - 2008/8/22
N2 - The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.
AB - The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.
KW - CHF-based discharge
KW - Inductively coupled plasma (ICP)
KW - Reactive ion etching (RIE)
KW - Resistance random access memory (RRAM)
KW - Transition-metal oxide
UR - http://www.scopus.com/inward/record.url?scp=55149102809&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.6931
DO - 10.1143/JJAP.47.6931
M3 - Article
AN - SCOPUS:55149102809
SN - 0021-4922
VL - 47
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 8
M1 - 6931
ER -