Reactive ion etching process of transition-metal oxide for resistance random access memory device

Fumiyoshi Takano; Hisashi Shima; Hidenobu Muramatsu; Yutaka Kokaze; Yutaka Nishioka; Koukou Suu; Hirofumi Kishi; Nelson Buntimil Arboleda; Melanie David; Tanglaw Roman; Hideaki Kasai; Hiro Akinaga

doi:10.1143/JJAP.47.6931

Reactive ion etching process of transition-metal oxide for resistance random access memory device

Fumiyoshi Takano
, Hisashi Shima
, Hidenobu Muramatsu
, Yutaka Kokaze
, Yutaka Nishioka
, Koukou Suu
, Hirofumi Kishi
, Nelson Buntimil Arboleda
, Melanie David
, Tanglaw Roman
, Hideaki Kasai
, Hiro Akinaga

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF₃-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

Original language	English
Article number	6931
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.47.6931
Publication status	Published - 22 Aug 2008
Externally published	Yes

Keywords

CHF-based discharge
Inductively coupled plasma (ICP)
Reactive ion etching (RIE)
Resistance random access memory (RRAM)
Transition-metal oxide

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@article{d338ab8e4a514e429f35e7cd70e411d1,

title = "Reactive ion etching process of transition-metal oxide for resistance random access memory device",

abstract = "The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM{\texttrademark}), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.",

keywords = "CHF-based discharge, Inductively coupled plasma (ICP), Reactive ion etching (RIE), Resistance random access memory (RRAM), Transition-metal oxide",

author = "Fumiyoshi Takano and Hisashi Shima and Hidenobu Muramatsu and Yutaka Kokaze and Yutaka Nishioka and Koukou Suu and Hirofumi Kishi and Arboleda, \{Nelson Buntimil\} and Melanie David and Tanglaw Roman and Hideaki Kasai and Hiro Akinaga",

year = "2008",

month = aug,

day = "22",

doi = "10.1143/JJAP.47.6931",

language = "English",

volume = "47",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Reactive ion etching process of transition-metal oxide for resistance random access memory device

AU - Takano, Fumiyoshi

AU - Shima, Hisashi

AU - Muramatsu, Hidenobu

AU - Kokaze, Yutaka

AU - Nishioka, Yutaka

AU - Suu, Koukou

AU - Kishi, Hirofumi

AU - Arboleda, Nelson Buntimil

AU - David, Melanie

AU - Roman, Tanglaw

AU - Kasai, Hideaki

AU - Akinaga, Hiro

PY - 2008/8/22

Y1 - 2008/8/22

N2 - The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

AB - The reactive ion etching (RIE) of the binary transition-metal oxides (TMOs) NiO, CuO and CoO, which are expected to be key materials of resistance random access memory (RRAM™), was investigated. We found that inductively coupled plasma using CHF3-based discharge, which is highly compatible with conventional semiconductor RIE, is effective for the TMOs studied here. Furthermore, device fabrication using Pt/CoO/Pt trilayers is carried out, and a large change in resistance, which is an essential functionality of RRAM, was successfully observed. This should be definite evidence of a successful RIE realized in the present device fabrication.

KW - CHF-based discharge

KW - Inductively coupled plasma (ICP)

KW - Reactive ion etching (RIE)

KW - Resistance random access memory (RRAM)

KW - Transition-metal oxide

UR - https://www.scopus.com/pages/publications/55149102809

U2 - 10.1143/JJAP.47.6931

DO - 10.1143/JJAP.47.6931

M3 - Article

AN - SCOPUS:55149102809

SN - 0021-4922

VL - 47

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

M1 - 6931

ER -

Reactive ion etching process of transition-metal oxide for resistance random access memory device

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Keywords

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