Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact

Soraya Rahpeima, Essam M. Dief, Chandramalika R. Peiris, Stuart Ferrie, Alex Duan, Simone Ciampi, Colin L. Raston, Nadim Darwish

Research output: Contribution to journalArticle

Abstract

Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of <4 × 10−6Ω cm2between platinum and n-type Si (111)-H surfaces. This involved Si-O covalent bonding a monolayer of graphene oxide (GO) to the Si surface followed by electrochemical reduction to form reduced graphene oxide (rGO). Current-voltage plots demonstrate that the GO/rGO transformation is associated with a change from a rectifying to an ohmic contact. The process is a viable method for constructing semiconductor-rGO interfaces and demonstrates that GO/rGO monolayers can be used as active components in tuning the contact resistance of metal-semiconductor junctions.

Original languageEnglish
Pages (from-to)6209-6212
Number of pages4
JournalChemical Communications
Volume56
Issue number46
DOIs
Publication statusPublished - 11 Jun 2020

Keywords

  • graphene oxide–silicon
  • Si–O bonding
  • stable ohmic contact

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