Roadmap for Ferroelectric Domain Wall Nanoelectronics

Pankaj Sharma, Theodore S. Moise, Luigi Colombo, Jan Seidel

Research output: Contribution to journalReview articlepeer-review

10 Citations (Scopus)

Abstract

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low-energy electronics for applications in memory, logic, and brain-inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology.

Original languageEnglish
Article number2110263
Number of pages16
JournalAdvanced Functional Materials
Volume32
Issue number10
Early online date12 Nov 2021
DOIs
Publication statusPublished - 2 Mar 2022
Externally publishedYes

Keywords

  • agile electronics
  • brain-inspired computing
  • domain wall engineering
  • ferroelectrics
  • low energy data storage

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