Abstract
Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low-energy electronics for applications in memory, logic, and brain-inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology.
| Original language | English |
|---|---|
| Article number | 2110263 |
| Number of pages | 16 |
| Journal | Advanced Functional Materials |
| Volume | 32 |
| Issue number | 10 |
| Early online date | 12 Nov 2021 |
| DOIs | |
| Publication status | Published - 2 Mar 2022 |
| Externally published | Yes |
Keywords
- agile electronics
- brain-inspired computing
- domain wall engineering
- ferroelectrics
- low energy data storage