Robust ferroelectric polarization retention in harsh environments through engineered domain wall pinning

Dawei Zhang, Daniel Sando, Ying Pan, Pankaj Sharma, Jan Seidel

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Robust retention of ferroelectric polarization in harsh environments is a requirement for the application of ferroelectric materials in space, liquids, and various chemical conditions. Surface screening of the polarization can significantly alter domain states and usually has a strong influence on domain stability in ferroelectrics, hindering applications that require defined and non-volatile polarization states. Here, we show that designer defects in BiFeO3 can be engineered to strongly pin domain walls, which even in harsh environments such as 100% humidity and elevated temperatures of 175 °C leads to a superior polarization retention of several years for domain sizes well below 100 nm.

Original languageEnglish
Article number014102
Number of pages6
JournalJournal of Applied Physics
Volume129
Issue number1
DOIs
Publication statusPublished - 7 Jan 2021
Externally publishedYes

Keywords

  • Domain walls in ferroic materials
  • Domains
  • Harsh environment
  • Polarization

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