Abstract
This work presents fabrication of micro structures on sub–100 nm SiC membranes with a large aspect ratio up to 1:3200. Unlike conventional processes, this approach starts with Si wet etching to form suspended SiC membranes, followed by micro-machined processes to pattern free-standing microstructures such as cantilevers and micro bridges. This technique eliminates the sticking or the under-etching effects on free-standing structures, enhancing mechanical performance which is favorable for MEMS applications. In addition, post-Si-etching photography also enables the formation of metal electrodes on free standing SiC membranes to develop electrically-measurable devices. To proof this concept, the authors demonstrate a SiC pressure sensor by applying lithography and plasma etching on released ultrathin SiC films. The sensors exhibit excellent linear response to the applied pressure, as well as good repeatability. The proposed method opens a pathway for the development of self-sensing free-standing SiC sensors.
| Original language | English |
|---|---|
| Article number | 1700858 |
| Journal | Advanced Engineering Materials |
| Volume | 20 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Jan 2018 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- MEMS
- photolithography process
- pressure sensors
- self-sensing devices
- silicon carbide
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