Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells

Anirudh Sharma; Mihail Ionescu; Gunther Andersson; David Lewis

doi:10.1016/j.solmat.2013.03.012

Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells

Anirudh Sharma, Mihail Ionescu, Gunther Andersson, David Lewis

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.

Original language	English
Pages (from-to)	64-70
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	115
DOIs	https://doi.org/10.1016/j.solmat.2013.03.012
Publication status	Published - 2013

Keywords

Inverted structure
Lamination
Organic bulk hetero-junction photovoltaic
ZnO buffer layer

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2013.03.012

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title = "Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells",

abstract = "A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.",

keywords = "Inverted structure, Lamination, Organic bulk hetero-junction photovoltaic, ZnO buffer layer",

author = "Anirudh Sharma and Mihail Ionescu and Gunther Andersson and David Lewis",

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doi = "10.1016/j.solmat.2013.03.012",

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journal = "Solar Energy Materials and Solar Cells",

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T1 - Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells

AU - Sharma, Anirudh

AU - Ionescu, Mihail

AU - Andersson, Gunther

AU - Lewis, David

PY - 2013

Y1 - 2013

N2 - A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.

AB - A comprehensive study of zinc oxide (ZnO) film thickness and morphology on the electronic properties of inverted cells is reported. The complete conversion of zinc acetate precursor to 3-5 nm particles of ZnO with no residual acetate is obtained after 10 min at 300 C. The work-function determined by Ultraviolet Photoelectron Spectroscopy (UPS) was 4.3 eV. and is independent of the thickness of the ZnO layer or with the planarization of the ITO surface topology. However, the efficiency varies from 0.6% to 1.7% as the ZnO thickness varies from 17 nm to 28 nm (assuming full density for the ZnO layer) in a laminated device, with both the shunt and series resistance showing a strong variation with ZnO thickness. A relatively thick, mixed phase ZnO/bulk hetero-junction in which the bulk hetero-junction penetrates into the porous ZnO layer is proposed to explain the observed performance trends.

KW - Inverted structure

KW - Lamination

KW - Organic bulk hetero-junction photovoltaic

KW - ZnO buffer layer

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U2 - 10.1016/j.solmat.2013.03.012

DO - 10.1016/j.solmat.2013.03.012

M3 - Article

SN - 0927-0248

VL - 115

SP - 64

EP - 70

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells

Abstract

Keywords

UN SDGs

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