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Seebeck coefficient in SiC/Si heterojunction for self-powered thermal sensor

  • Pablo Guzman
  • , Toan Dinh
  • , Thanh Nguyen
  • , Van Thanh Dau
  • , Abu Riduan Md Foisal
  • , Hung Nguyen
  • , Hieu Vu
  • , Tuan-Khoa Nguyen
  • , Hoang-Phuong Phan
  • , Huaizong Li
  • , Nam-Trung Nguyen
  • , Dzung Viet Dao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

Development of new materials with high thermoelectric coefficient will expand the capability of thermoelectric sensors. In this work, we investigate the thermoelectric properties of silicon carbide (SiC) on silicon (Si) heterojunction towards self-powered temperature sensing applications. A SiC/Si heterojunction device was designed and fabricated to measure the Seebeck coefficient. The device showed a high Seebeck coefficient of -156.11 V at 336 K, which progressively increased with increasing temperature and reached -374.78 V at 383 K. These thermoelectric characteristics indicate superior result compared to previous polycrystalline and monocrystalline SiC thin films. The innovative heterojunction demonstrated in this work holds promises for developing highly sensitive self-powered thermal sensors.

Original languageEnglish
Title of host publication2021 IEEE Sensors, SENSORS 2021 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)9781728195018
ISBN (Print)9781728195025
DOIs
Publication statusPublished - 2021
Externally publishedYes
Event20th IEEE Sensors, SENSORS 2021 - Virtual, Online, Australia
Duration: 31 Oct 20214 Nov 2021

Publication series

NameProceedings of IEEE Sensors
Volume2021-October
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Conference

Conference20th IEEE Sensors, SENSORS 2021
Country/TerritoryAustralia
CityVirtual, Online
Period31/10/214/11/21

Keywords

  • heterojunction
  • Seebeck coefficient
  • self-powered thermal sensors
  • Silicon Carbide

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