Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

C. W. Bark; P. Sharma; Y. Wang; S. H. Baek; S. Lee; S. Ryu; C. M. Folkman; T. R. Paudel; A. Kumar; S. V. Kalinin; A. Sokolov; E. Y. Tsymbal; M. S. Rzchowski; A. Gruverman; C. B. Eom

doi:10.1021/nl3001088

Switchable Induced Polarization in LaAlO₃/SrTiO₃ Heterostructures

C. W. Bark, P. Sharma, Y. Wang, S. H. Baek, S. Lee, S. Ryu, C. M. Folkman, T. R. Paudel, A. Kumar, S. V. Kalinin, A. Sokolov, E. Y. Tsymbal, M. S. Rzchowski, A. Gruverman, C. B. Eom

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162 Citations (Scopus)

Abstract

Demonstration of a tunable conductivity of the LaAlO ₃/SrTiO ₃ interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal-insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO ₃ surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron gas (2DEG) density at the LaAlO ₃/SrTiO ₃ (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.

Original language	English
Pages (from-to)	1765-1771
Number of pages	7
Journal	Nano Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1021/nl3001088
Publication status	Published - 11 Apr 2012
Externally published	Yes

Keywords

complex oxides
Heterointerfaces
oxygen vacancies
piezoresponse force microscopy

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title = "Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures",

abstract = "Demonstration of a tunable conductivity of the LaAlO 3/SrTiO 3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal-insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO 3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron gas (2DEG) density at the LaAlO 3/SrTiO 3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.",

keywords = "complex oxides, Heterointerfaces, oxygen vacancies, piezoresponse force microscopy",

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AU - Bark, C. W.

AU - Sharma, P.

AU - Wang, Y.

AU - Baek, S. H.

AU - Lee, S.

AU - Ryu, S.

AU - Folkman, C. M.

AU - Paudel, T. R.

AU - Kumar, A.

AU - Kalinin, S. V.

AU - Sokolov, A.

AU - Tsymbal, E. Y.

AU - Rzchowski, M. S.

AU - Gruverman, A.

AU - Eom, C. B.

PY - 2012/4/11

Y1 - 2012/4/11

N2 - Demonstration of a tunable conductivity of the LaAlO 3/SrTiO 3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal-insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO 3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron gas (2DEG) density at the LaAlO 3/SrTiO 3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.

AB - Demonstration of a tunable conductivity of the LaAlO 3/SrTiO 3 interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal-insulator phase transition and surface charge writing, generally it is implied that this effect is a result of electrical modification of the LaAlO 3 surface (either due to electrochemical dissociation of surface adsorbates or free charge deposition) leading to the change in the two-dimensional electron gas (2DEG) density at the LaAlO 3/SrTiO 3 (LAO/STO) interface. In this paper, using piezoresponse force microscopy we demonstrate a switchable electromechanical response of the LAO overlayer, which we attribute to the motion of oxygen vacancies through the LAO layer thickness. These electrically induced reversible changes in bulk stoichiometry of the LAO layer are a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.

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KW - Heterointerfaces

KW - oxygen vacancies

KW - piezoresponse force microscopy

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Switchable Induced Polarization in LaAlO₃/SrTiO₃ Heterostructures

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