Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers

Miao Xiang Chen, Erik Perzon, Mats R. Andersson, Magnus Bergrren

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.
Original languageEnglish
Title of host publicationProceedings Volume 5522, Organic Field-Effect Transistors III
Number of pages7
Publication statusPublished - 18 Oct 2004
Externally publishedYes
EventOrganic Field-Effect Transistors III: Optical Science and Technology - Denver, United States
Duration: 3 Aug 2004 → …
Conference number: 49th


ConferenceOrganic Field-Effect Transistors III
Country/TerritoryUnited States
Period3/08/04 → …


  • transistors
  • Light Emitting Diodes
  • polymer light-emitting diodes


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