Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers

Miao Xiang Chen; Erik Perzon; Mats R. Andersson; Magnus Bergrren

doi:10.1117/12.561389

Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers

Miao Xiang Chen
, Erik Perzon
, Mats R. Andersson
, Magnus Bergrren

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.

Original language	English
Title of host publication	Proceedings Volume 5522, Organic Field-Effect Transistors III
Number of pages	7
DOIs	https://doi.org/10.1117/12.561389
Publication status	Published - 18 Oct 2004
Externally published	Yes
Event	Organic Field-Effect Transistors III: Optical Science and Technology - Denver, United States Duration: 3 Aug 2004 → … Conference number: 49th

Conference

Conference	Organic Field-Effect Transistors III
Country/Territory	United States
City	Denver
Period	3/08/04 → …

Keywords

transistors
Light Emitting Diodes
polymer light-emitting diodes

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@inproceedings{2824dbe471094fa3b6c4f4fe3c3f0d1f,

title = "Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers",

abstract = "We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03\% to 0.05\%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.",

keywords = "transistors, Light Emitting Diodes, polymer light-emitting diodes",

author = "Chen, \{Miao Xiang\} and Erik Perzon and Andersson, \{Mats R.\} and Magnus Bergrren",

year = "2004",

month = oct,

day = "18",

doi = "10.1117/12.561389",

language = "English",

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note = "Organic Field-Effect Transistors III : Optical Science and Technology ; Conference date: 03-08-2004",

}

TY - GEN

T1 - Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers

AU - Chen, Miao Xiang

AU - Perzon, Erik

AU - Andersson, Mats R.

AU - Bergrren, Magnus

N1 - Conference code: 49th

PY - 2004/10/18

Y1 - 2004/10/18

N2 - We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.

AB - We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.

KW - transistors

KW - Light Emitting Diodes

KW - polymer light-emitting diodes

U2 - 10.1117/12.561389

DO - 10.1117/12.561389

M3 - Conference contribution

BT - Proceedings Volume 5522, Organic Field-Effect Transistors III

T2 - Organic Field-Effect Transistors III

Y2 - 3 August 2004

ER -

Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers

Abstract

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Keywords

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