Tuning the low-energy band structure in twisted bilayer WSe2

T. H.Y. Vu; O. J. Clark; N. H. Jo; J. Blyth; Q. Li; C. Jozwiak; A. Bostwick; J. B. Muir; L. Jia; J. A. Davis; I. Di Bernardo; A. Grubišić Č. abo; K. Xing; W. Zhao; S. H. Ryu; S. H. Lee; Z. Mao; K. Watanabe; T. Taniguchi; B. A. Chambers; S. L. Harmer; E. Rotenberg; M. S. Fuhrer; M. T. Edmonds

doi:10.1103/2hwx-5bg8

Tuning the low-energy band structure in twisted bilayer WSe₂

T. H.Y. Vu, O. J. Clark, N. H. Jo, J. Blyth, Q. Li, C. Jozwiak, A. Bostwick, J. B. Muir, L. Jia, J. A. Davis, I. Di Bernardo, A. Grubišić Č. abo, K. Xing, W. Zhao, S. H. Ryu, S. H. Lee, Z. Mao, K. Watanabe, T. Taniguchi, B. A. ChambersS. L. Harmer, E. Rotenberg, M. S. Fuhrer, M. T. Edmonds

Research output: Contribution to journal › Letter › peer-review

Abstract

Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer WSe2 over a large range of twist angle. While the momentum positioning of the valence-band maxima (VBM) is independent of twist angle, we find that the energetic separation between the hole bands at the K point of the Brillouin zone and the higher binding-energy hole band at Γ can be varied in excess of 100 meV.We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition-metal dichalcogenide devices.

Original language	English
Pages (from-to)	L1611171-L1611178
Number of pages	8
Journal	Physical Review B
Volume	112
Issue number	16
DOIs	https://doi.org/10.1103/2hwx-5bg8
Publication status	Published - 14 Oct 2025

Keywords

Electronic structures
next generation electronics
two-dimensional (2D)
material-based heterostructures
photoemission spectroscopy
nano-ARPES
twisted bilayer

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Vu, T. H. Y., Clark, O. J., Jo, N. H., Blyth, J., Li, Q., Jozwiak, C., Bostwick, A., Muir, J. B., Jia, L., Davis, J. A., Di Bernardo, I., abo, A. G. Č., Xing, K., Zhao, W., Ryu, S. H., Lee, S. H., Mao, Z., Watanabe, K., Taniguchi, T., ... Edmonds, M. T. (2025). Tuning the low-energy band structure in twisted bilayer WSe₂. Physical Review B, 112(16), L1611171-L1611178. https://doi.org/10.1103/2hwx-5bg8

@article{2e184de9c83347919c9060592f7a3e4b,

title = "Tuning the low-energy band structure in twisted bilayer WSe2",

abstract = "Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer WSe2 over a large range of twist angle. While the momentum positioning of the valence-band maxima (VBM) is independent of twist angle, we find that the energetic separation between the hole bands at the K point of the Brillouin zone and the higher binding-energy hole band at Γ can be varied in excess of 100 meV.We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition-metal dichalcogenide devices.",

keywords = "Electronic structures, next generation electronics, two-dimensional (2D), material-based heterostructures, photoemission spectroscopy, nano-ARPES, twisted bilayer",

author = "Vu, {T. H.Y.} and Clark, {O. J.} and Jo, {N. H.} and J. Blyth and Q. Li and C. Jozwiak and A. Bostwick and Muir, {J. B.} and L. Jia and Davis, {J. A.} and {Di Bernardo}, I. and abo, {A. Grubi{\v s}i{\'c} {\v C}.} and K. Xing and W. Zhao and Ryu, {S. H.} and Lee, {S. H.} and Z. Mao and K. Watanabe and T. Taniguchi and Chambers, {B. A.} and Harmer, {S. L.} and E. Rotenberg and Fuhrer, {M. S.} and Edmonds, {M. T.}",

year = "2025",

month = oct,

day = "14",

doi = "10.1103/2hwx-5bg8",

language = "English",

volume = "112",

pages = "L1611171--L1611178",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "16",

}

Vu, THY, Clark, OJ, Jo, NH, Blyth, J, Li, Q, Jozwiak, C, Bostwick, A, Muir, JB, Jia, L, Davis, JA, Di Bernardo, I, abo, AGČ, Xing, K, Zhao, W, Ryu, SH, Lee, SH, Mao, Z, Watanabe, K, Taniguchi, T, Chambers, BA , Harmer, SL, Rotenberg, E, Fuhrer, MS & Edmonds, MT 2025, 'Tuning the low-energy band structure in twisted bilayer WSe₂', Physical Review B, vol. 112, no. 16, pp. L1611171-L1611178. https://doi.org/10.1103/2hwx-5bg8

TY - JOUR

T1 - Tuning the low-energy band structure in twisted bilayer WSe2

AU - Vu, T. H.Y.

AU - Clark, O. J.

AU - Jo, N. H.

AU - Blyth, J.

AU - Li, Q.

AU - Jozwiak, C.

AU - Bostwick, A.

AU - Muir, J. B.

AU - Jia, L.

AU - Davis, J. A.

AU - Di Bernardo, I.

AU - abo, A. Grubišić Č.

AU - Xing, K.

AU - Zhao, W.

AU - Ryu, S. H.

AU - Lee, S. H.

AU - Mao, Z.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Chambers, B. A.

AU - Harmer, S. L.

AU - Rotenberg, E.

AU - Fuhrer, M. S.

AU - Edmonds, M. T.

PY - 2025/10/14

Y1 - 2025/10/14

N2 - Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer WSe2 over a large range of twist angle. While the momentum positioning of the valence-band maxima (VBM) is independent of twist angle, we find that the energetic separation between the hole bands at the K point of the Brillouin zone and the higher binding-energy hole band at Γ can be varied in excess of 100 meV.We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition-metal dichalcogenide devices.

AB - Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer WSe2 over a large range of twist angle. While the momentum positioning of the valence-band maxima (VBM) is independent of twist angle, we find that the energetic separation between the hole bands at the K point of the Brillouin zone and the higher binding-energy hole band at Γ can be varied in excess of 100 meV.We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition-metal dichalcogenide devices.

KW - Electronic structures

KW - next generation electronics

KW - two-dimensional (2D)

KW - material-based heterostructures

KW - photoemission spectroscopy

KW - nano-ARPES

KW - twisted bilayer

UR - http://www.scopus.com/inward/record.url?scp=105020670232&partnerID=8YFLogxK

U2 - 10.1103/2hwx-5bg8

DO - 10.1103/2hwx-5bg8

M3 - Letter

AN - SCOPUS:105020670232

SN - 2469-9950

VL - 112

SP - L1611171-L1611178

JO - Physical Review B

JF - Physical Review B

IS - 16

ER -

Tuning the low-energy band structure in twisted bilayer WSe₂

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