Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures

Thanh Nguyen; Toan Dinh; Abu Riduan Md Foisal; Hoang-Phuong Phan; Tuan-Khoa Nguyen; Nam-Trung Nguyen; Dzung Viet Dao

doi:10.1109/TRANSDUCERS.2019.8808394

Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures

Thanh Nguyen
, Toan Dinh
, Abu Riduan Md Foisal
, Hoang-Phuong Phan
, Tuan-Khoa Nguyen
, Nam-Trung Nguyen
, Dzung Viet Dao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

Here we report for the first time an ultra-sensitive opto-piezoresistive effect in cubic silicon carbide (3C-SiC) nanofilms grown on silicon (Si). The sensitivity of the sensor was significantly enhanced by coupling the photovoltaic effect and controlling distribution of hole/electron in semiconductors. By applying this method, the gauge factor (GF) of strain sensors can be improved at least three orders of magnitude compared to conventional MEMS sensor. A GF of approximately 58,000 was observed, which is the highest GF reported for semiconductor piezoresistive sensors to date. Consequently, our findings can be deployed to develop ultra-sensitive mechanical sensors and MEMS/NEMS sensing applications.

Original language	English
Title of host publication	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Publisher	Institute of Electrical and Electronics Engineers
Pages	2057-2060
Number of pages	4
ISBN (Electronic)	9781728120072, 9781538681046
DOIs	https://doi.org/10.1109/TRANSDUCERS.2019.8808394
Publication status	Published - Jun 2019
Externally published	Yes
Event	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII - Berlin, Germany Duration: 23 Jun 2019 → 27 Jun 2019

Publication series

Name	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Conference

Conference	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Country/Territory	Germany
City	Berlin
Period	23/06/19 → 27/06/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

heterojunctions
opto-piezoresistive
photovoltaic effect.
Piezoresistance
piezoresistive effect
ultra-sensitive strain sensor

Access to Document

10.1109/TRANSDUCERS.2019.8808394Licence: In Copyright

Cite this

Nguyen, T., Dinh, T., Md Foisal, A. R., Phan, H.-P., Nguyen, T.-K., Nguyen, N.-T., & Dao, D. V. (2019). Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII (pp. 2057-2060). Article 8808394 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/TRANSDUCERS.2019.8808394

Nguyen, Thanh ; Dinh, Toan ; Md Foisal, Abu Riduan et al. / Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures. 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers, 2019. pp. 2057-2060 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

@inproceedings{f3ce474791c740f4b7151b768b69f467,

title = "Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures",

abstract = "Here we report for the first time an ultra-sensitive opto-piezoresistive effect in cubic silicon carbide (3C-SiC) nanofilms grown on silicon (Si). The sensitivity of the sensor was significantly enhanced by coupling the photovoltaic effect and controlling distribution of hole/electron in semiconductors. By applying this method, the gauge factor (GF) of strain sensors can be improved at least three orders of magnitude compared to conventional MEMS sensor. A GF of approximately 58,000 was observed, which is the highest GF reported for semiconductor piezoresistive sensors to date. Consequently, our findings can be deployed to develop ultra-sensitive mechanical sensors and MEMS/NEMS sensing applications.",

keywords = "heterojunctions, opto-piezoresistive, photovoltaic effect., Piezoresistance, piezoresistive effect, ultra-sensitive strain sensor",

author = "Thanh Nguyen and Toan Dinh and \{Md Foisal\}, \{Abu Riduan\} and Hoang-Phuong Phan and Tuan-Khoa Nguyen and Nam-Trung Nguyen and Dao, \{Dzung Viet\}",

year = "2019",

month = jun,

doi = "10.1109/TRANSDUCERS.2019.8808394",

language = "English",

series = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",

publisher = "Institute of Electrical and Electronics Engineers",

pages = "2057--2060",

booktitle = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",

address = "United States",

note = "20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII ; Conference date: 23-06-2019 Through 27-06-2019",

}

Nguyen, T, Dinh, T, Md Foisal, AR, Phan, H-P, Nguyen, T-K, Nguyen, N-T & Dao, DV 2019, Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures. in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII., 8808394, 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Institute of Electrical and Electronics Engineers, pp. 2057-2060, 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Berlin, Germany, 23/06/19. https://doi.org/10.1109/TRANSDUCERS.2019.8808394

Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures. / Nguyen, Thanh; Dinh, Toan; Md Foisal, Abu Riduan et al.
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers, 2019. p. 2057-2060 8808394 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures

AU - Nguyen, Thanh

AU - Dinh, Toan

AU - Md Foisal, Abu Riduan

AU - Phan, Hoang-Phuong

AU - Nguyen, Tuan-Khoa

AU - Nguyen, Nam-Trung

AU - Dao, Dzung Viet

PY - 2019/6

Y1 - 2019/6

N2 - Here we report for the first time an ultra-sensitive opto-piezoresistive effect in cubic silicon carbide (3C-SiC) nanofilms grown on silicon (Si). The sensitivity of the sensor was significantly enhanced by coupling the photovoltaic effect and controlling distribution of hole/electron in semiconductors. By applying this method, the gauge factor (GF) of strain sensors can be improved at least three orders of magnitude compared to conventional MEMS sensor. A GF of approximately 58,000 was observed, which is the highest GF reported for semiconductor piezoresistive sensors to date. Consequently, our findings can be deployed to develop ultra-sensitive mechanical sensors and MEMS/NEMS sensing applications.

AB - Here we report for the first time an ultra-sensitive opto-piezoresistive effect in cubic silicon carbide (3C-SiC) nanofilms grown on silicon (Si). The sensitivity of the sensor was significantly enhanced by coupling the photovoltaic effect and controlling distribution of hole/electron in semiconductors. By applying this method, the gauge factor (GF) of strain sensors can be improved at least three orders of magnitude compared to conventional MEMS sensor. A GF of approximately 58,000 was observed, which is the highest GF reported for semiconductor piezoresistive sensors to date. Consequently, our findings can be deployed to develop ultra-sensitive mechanical sensors and MEMS/NEMS sensing applications.

KW - heterojunctions

KW - opto-piezoresistive

KW - photovoltaic effect.

KW - Piezoresistance

KW - piezoresistive effect

KW - ultra-sensitive strain sensor

UR - https://www.scopus.com/pages/publications/85071952325

UR - http://purl.org/au-research/grants/ARC/LP150100153

UR - http://purl.org/au-research/grants/ARC/LP160101553

U2 - 10.1109/TRANSDUCERS.2019.8808394

DO - 10.1109/TRANSDUCERS.2019.8808394

M3 - Conference contribution

AN - SCOPUS:85071952325

T3 - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

SP - 2057

EP - 2060

BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

PB - Institute of Electrical and Electronics Engineers

T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Y2 - 23 June 2019 through 27 June 2019

ER -

Nguyen T, Dinh T, Md Foisal AR, Phan HP, Nguyen TK, Nguyen NT et al. Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers. 2019. p. 2057-2060. 8808394. (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). doi: 10.1109/TRANSDUCERS.2019.8808394

Ultra-Sensitive OPTO-Piezoresistive Sensors Utilising 3C-SiC/Si Heterostructures

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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