TY - JOUR
T1 - Ultrathin oxysulfide semiconductors from liquid metal
T2 - a wet chemical approach
AU - Nguyen, Chung Kim
AU - Low, Mei Xian
AU - Zavabeti, Ali
AU - Jannat, Azmira
AU - Murdoch, Billy J.
AU - Della Gaspera, Enrico
AU - Orrell-Trigg, Rebecca
AU - Walia, Sumeet
AU - Elbourne, Aaron
AU - Truong, Vi Khanh
AU - McConville, Chris F.
AU - Syed, Nitu
AU - Daeneke, Torben
PY - 2021/9/21
Y1 - 2021/9/21
N2 - Metal oxychalcogenides are emerging as a new motif of group VI-A semiconductors with unique electronic properties. Among this family, two dimensional (2D) oxysulfide materials have been increasingly involved in the development of next-gen electronic and optoelectronic devices. However, current synthesis routes for 2D metal oxysulfides are still limited to vapor phase deposition techniques, hindering access to ultra-thin, well-defined, and highly crystalline structures. Herein, we report a new synthesis approach for atomically thin and large-area indium oxysulfide nanosheets (2D In2O3−xSx,xis from 0 to 0.41). The process consists of printing indium oxide skins out of molten indium metal and a subsequent sulfur insertion conducted in a trisulfur radical anion solution. Back-gated field-effect transistors (FETs) based on 2D In2O3−xSxreveal a notably high electron mobility of ∼20.4 cm2V−1s−1, corresponding to approximately 270% mobility enhancement over as-synthesized indium oxide. In addition, 2D In2O3−xSxbased photodetectors exhibit an excellent performance in ultraviolet (UV) region, with a photoresponsivity of ∼3.4 × 103A W−1greatly surpassing that of many commercial materials. More importantly, the same reaction parameters can be employed to obtain 2D bismuth oxysulfide and 2D tin oxysulfide, offering a furnace-free approach for 2D oxysulfide semiconductor fabrication.
AB - Metal oxychalcogenides are emerging as a new motif of group VI-A semiconductors with unique electronic properties. Among this family, two dimensional (2D) oxysulfide materials have been increasingly involved in the development of next-gen electronic and optoelectronic devices. However, current synthesis routes for 2D metal oxysulfides are still limited to vapor phase deposition techniques, hindering access to ultra-thin, well-defined, and highly crystalline structures. Herein, we report a new synthesis approach for atomically thin and large-area indium oxysulfide nanosheets (2D In2O3−xSx,xis from 0 to 0.41). The process consists of printing indium oxide skins out of molten indium metal and a subsequent sulfur insertion conducted in a trisulfur radical anion solution. Back-gated field-effect transistors (FETs) based on 2D In2O3−xSxreveal a notably high electron mobility of ∼20.4 cm2V−1s−1, corresponding to approximately 270% mobility enhancement over as-synthesized indium oxide. In addition, 2D In2O3−xSxbased photodetectors exhibit an excellent performance in ultraviolet (UV) region, with a photoresponsivity of ∼3.4 × 103A W−1greatly surpassing that of many commercial materials. More importantly, the same reaction parameters can be employed to obtain 2D bismuth oxysulfide and 2D tin oxysulfide, offering a furnace-free approach for 2D oxysulfide semiconductor fabrication.
KW - metal oxychalcogenides
KW - VI-A semiconductors
KW - optoelectronics
KW - oxysulfide semiconductors
KW - liquid metal
KW - wet chemical
KW - Indium tin oxide
UR - http://www.scopus.com/inward/record.url?scp=85115189584&partnerID=8YFLogxK
UR - http://purl.org/au-research/grants/ARC/DE190100100
U2 - 10.1039/d1tc01937f
DO - 10.1039/d1tc01937f
M3 - Article
AN - SCOPUS:85115189584
SN - 2050-7526
SP - 11815
EP - 11826
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 35
ER -