Universal buried interface modification with lead iodide for efficient and stable perovskite solar cells

Dang Thuan Nguyen, Anh Dinh Bui, Daniel Walter, Khoa Nguyen, Hualin Zhan, Xuan Minh Chau Ta, Grace Dansoa Tabi, Thành Trần-Phú, Li Chun Chang, Keqing Huang, Minh Anh Truong, Atsushi Wakamiya, Sunita Gautam Adhikari, Hieu Nguyen, Anne Haggren, Viqar Ahmad, Thanh Tung Duong, Nguyen Duy Cuong, Heping Shen, Kylie CatchpoleKlaus Weber, Thomas White, The Duong

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A controlled amount of excess lead iodide (PbI2) in the perovskite precursor has been widely used in perovskite solar cells (PSCs) to enhance the device's performance by passivating defects. However, an excessive amount of PbI2 can lead to significant hysteresis and reduced stability. Managing the excess PbI2 in the perovskite bulk and on the top (exposed) surface is achievable, but the bottom surface presents a challenge. This study offers a method for adjusting the amount of excess PbI2 in perovskite solar cells at both the bottom surface and the bulk of the perovskite layer. This treatment, known as buried interface modification, is effective for both negative-intrinsic-positive (n-i-p) and positive-intrinsic-negative (p-i-n) structures, achieving efficiencies of 25.9% and 24.6%, respectively, with negligible hysteresis and excellent stability of over 1000 hours under light at the maximum power point.

Original languageEnglish
Pages (from-to)14055-14063
Number of pages9
JournalJournal of Materials Chemistry A
Volume13
Issue number19
Early online date31 Mar 2025
DOIs
Publication statusPublished - 21 May 2025

Keywords

  • lead iodide (PbI2)
  • perovskite solar cells (PSCs)
  • interface modification

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